APR/Physical Design Engineer 1

Job Description'-Memory architecture design (SRAM, DRAM, MRAM, RRAM, PCRAM and eFlash)Read and write critical path design and analysisDesign of key building blocks (sensing, analog, high voltage, DFT)Chip-level design verificationEmbedded non-volatile memory compiler and productizationCo-work with product/reliability engineer on silicon characterization and reliability qualificationQualifications'-The candidates should have at least bachelor degree in relevant field.Memory experts in the field of SRAM.Familiar with bit cell characteristics (Vmin, bit cell performance, write margin), sense amplifier design, high sigma variation analysis, race check, margin signoff.Knowledge on high speed and low Vmin design is a plus.Highly welcome candidates who have less experience but have good Memory Design design experience, working attitude and are self-motivated.Good command of Japanese. English is a plus.All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, or disability.